Application Description:

In the photovoltaic system, the IGBT is the core component of the photovoltaic power generation system and constitutes the core component of the photovoltaic inverter. It can convert the variable DC voltage generated by the photovoltaic (PV) solar panels into utility frequency AC power to be fed back to the commercial power transmission system or used for off-grid power supply.

Product Advantages:

1. Traditional inverters use MOSFET as the power device. However, with the increase in voltage, the on-state resistance of MOSFET also increases. In some high-voltage and high-capacity systems, the high on-state resistance of MOSFET leads to increased switch losses. In comparison, IGBT has a higher on-state current, higher reverse voltage capability, and is controlled by voltage for conduction and turn-off. These characteristics make IGBT more advantageous in medium to high-voltage and high-capacity systems.

2. With the continuous increase in power ratings and the increase in overall system size, photovoltaic inverters have higher requirements for power device specifications and heat dissipation. Compared to traditional silicon materials, silicon carbide offers superior performance. Therefore, silicon carbide power devices are being widely used in photovoltaic inverters. Among them, silicon carbide Schottky diodes with no reverse recovery current are widely used in the MPPT circuit of photovoltaic inverters, significantly reducing losses, optimizing heat dissipation, and lowering costs.